Gallium Nitride (GaN) wafers are a critical material for next-generation semiconductor applications, renowned for their superior performance in high-power, high-frequency, and high-temperature environments. GaN is a wide-bandgap semiconductor that offers significant advantages over traditional silicon-based materials, making it ideal for power electronics, RF devices, LEDs, and more.
Product Features
Wide Bandgap
GaN's larger bandgap (3.4 eV) compared to silicon allows for higher breakdown voltages and efficiency in power applications.
High Electron Mobility
GaN wafers provide faster switching speeds and lower resistance, enhancing device performance in high-frequency and high-efficiency applications.
Thermal Conductivity
With excellent thermal management properties, GaN wafers enable devices to operate reliably at higher temperatures.
Low Power Loss
GaN materials significantly reduce power loss during operation, making them ideal for energy-efficient systems.
Wafer Sizes: Available in 2-inch, 4-inch, and 6-inch diameters.
Thickness: Customizable based on application requirements.
Surface Finish: Polished or semi-polished.
Orientation: (0001) or (11-20) depending on specific application needs.
Doping Types: Both n-type and semi-insulating GaN wafers available.
Power Electronics: GaN wafers are used in high-efficiency power converters, inverters, and chargers for electric vehicles, renewable energy systems, and industrial power supplies.
RF Devices: GaN’s high electron mobility makes it perfect for RF amplifiers, wireless communication systems (5G), radar, and satellite communication.
Optoelectronics: GaN is a key material for high-brightness LEDs and laser diodes used in lighting, displays, and optical communication.
Aerospace & Defense: GaN wafers are integral to advanced radar systems, high-power RF systems, and space electronics that demand high performance in extreme environments.
