Indium Gallium Phosphide (InGaP) Wafers
Overview
Indium Gallium Phosphide (InGaP) wafers are a high-performance compound semiconductor material, recognized for their excellent optoelectronic and electronic properties. InGaP wafers are primarily used in applications that require efficient light emission, high-frequency operation, and superior heat tolerance. These wafers are a critical component in the manufacture of high-efficiency solar cells, light-emitting diodes (LEDs), and microwave-frequency devices. Due to their superior performance in converting electrical energy into light and their ability to operate effectively at high frequencies, InGaP wafers are widely employed in advanced electronics, telecommunications, and renewable energy applications.
Product Features
High Efficiency Light Emission
InGaP wafers are known for their high-efficiency light emission, making them ideal for LEDs, laser diodes, and optoelectronic devices.
High-Frequency Performance
These wafers are commonly used in radio frequency (RF) and microwave devices due to their ability to function effectively at high frequencies, including in mobile communication systems and satellite technologies.
Solar Cell Efficiency
InGaP wafers are often used in the top layers of multijunction solar cells, providing excellent efficiency in converting sunlight to electricity, especially in space and high-performance terrestrial solar applications.
Thermal Stability
InGaP’s ability to maintain performance under high temperatures makes it suitable for applications that require stability in extreme environments.
- Wafer Sizes: Typically available in diameters of 2-inch, 3-inch, and 4-inch, with custom sizes available for specialized applications.
- Thickness: Standard thickness ranges from 100 µm to 500 µm, customizable based on specific application needs.
- Doping: Available in both N-type and P-type doping to customize the electrical properties of the wafer for specific device requirements.
- Surface Finish: Can be supplied with polished or semi-polished surfaces, depending on the optical or electronic application.
- Crystallographic Orientation: Standard orientations include (100) and (111), selected based on the intended application.
- Light-Emitting Diodes (LEDs): InGaP wafers are widely used in the production of high-efficiency LEDs, providing bright and energy-efficient light across various wavelengths.
- Laser Diodes: These wafers are critical in the manufacture of laser diodes for optical communications, printing, and data storage technologies.
- Microwave and RF Devices: InGaP wafers are essential in high-frequency RF and microwave circuits used in mobile communication, radar systems, and satellite communications.
- High-Efficiency Solar Cells: InGaP wafers are often used as the top layer in multijunction solar cells, particularly in high-efficiency space and terrestrial photovoltaic systems where maximizing energy conversion across a broad spectrum of light is key.